The lab deals with bipolar transistors. (Chapter 18).
Figure 18.3 may be useful for the "double diode" model
for npn and pnp transistors.  The 'n' or
'p' is referring to n-type (electron carriers)
and p-type (hole carriers) semiconductors.  If you
make a diode then the "triangle" side of the diode
is p-type and the "bar" side is n-type (the cathode).
The transistor shown in the lab manual is a pnp.  In
typical operation the base-emitter (the emitter has
the arrow symbol) is forward biased and the collector
base is reversed biased.  The operation of the circuit
is fairly well explained in the text Section 18.3 pp. 
389-392 and Section 18.5 pp. 393-396.

There are some typical curves in Fig. 18.9 and 18.10
(although those may be for Si transistors rather than
Ge).

I have left the characteristics of the 2N1305 outside of
my door along with an explanation of the breakdown voltages
and leakage currents (as taken from a Motorola Application
Note).